Properties of laser-induced thermochemical etching of InP
Identifieur interne : 000525 ( Main/Exploration ); précédent : 000524; suivant : 000526Properties of laser-induced thermochemical etching of InP
Auteurs : RBID : ISTEX:11664_1988_Article_BF02652229.pdfDescripteurs français
- Wicri :
- topic : Chlore.
English descriptors
- KwdEn :
Abstract
The properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar+ laser and reactant gas Cl2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of the relationship between the etching rate and light intensity are given.
DOI: 10.1007/BF02652229
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Properties of laser-induced thermochemical etching of InP</title><author><name>Li Ding</name><affiliation wicri:level="1"><mods:affiliation>Shanghai Institute of Laser Technology, 200031, Shanghai, China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Shanghai Institute of Laser Technology, 200031, Shanghai</wicri:regionArea><wicri:noRegion>Shanghai</wicri:noRegion></affiliation></author><author><name>Qiu Mingxin</name><affiliation wicri:level="1"><mods:affiliation>Shanghai Institute of Laser Technology, 200031, Shanghai, China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Shanghai Institute of Laser Technology, 200031, Shanghai</wicri:regionArea><wicri:noRegion>Shanghai</wicri:noRegion></affiliation></author><author><name>Kuang Zhong</name><affiliation wicri:level="1"><mods:affiliation>North-West Telecommunication Engineering Institute, 200031, Shanghai, China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>North-West Telecommunication Engineering Institute, 200031, Shanghai</wicri:regionArea><wicri:noRegion>Shanghai</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1988_Article_BF02652229.pdf</idno><date when="1988">1988</date><idno type="doi">10.1007/BF02652229</idno><idno type="wicri:Area/Main/Corpus">000544</idno><idno type="wicri:Area/Main/Curation">000544</idno><idno type="wicri:Area/Main/Exploration">000525</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ar+ laser-induced etching</term><term>Chlorine</term><term>Indium</term><term>Phosphide kwthreshold.</term><term>Thermochemical reaction</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Chlore</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar+ laser and reactant gas Cl2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of the relationship between the etching rate and light intensity are given.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="5e7e9bad51054bc82b0047dd17674ef874d8b1cf"><titleInfo lang="eng"><title>Properties of laser-induced thermochemical etching of InP</title></titleInfo><name type="personal"><namePart type="given">Li</namePart><namePart type="family">Ding</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Shanghai Institute of Laser Technology, 200031, Shanghai, China</affiliation></name><name type="personal"><namePart type="given">Qiu</namePart><namePart type="family">Mingxin</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Shanghai Institute of Laser Technology, 200031, Shanghai, China</affiliation></name><name type="personal"><namePart type="given">Kuang</namePart><namePart type="family">Zhong</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>North-West Telecommunication Engineering Institute, 200031, Shanghai, China</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1987-04-27</dateCreated><dateValid encoding="w3cdtf">2007-06-15</dateValid><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar+ laser and reactant gas Cl2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of the relationship between the etching rate and light intensity are given.</abstract><subject lang="eng"><genre>Key words</genre><topic>Ar+ laser-induced etching</topic><topic>thermochemical reaction</topic><topic>chlorine</topic><topic>indium</topic><topic>phosphide kwthreshold.</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1988</partNumber><partNumber>Volume: 17</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1988-01-01</dateIssued><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 18</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1988</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02652229</identifier><identifier type="matrixNumber">Art7</identifier><identifier type="local">BF02652229</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>29</start><end>32</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1988</recordOrigin><recordIdentifier>11664_1988_Article_BF02652229.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000525 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000525 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:11664_1988_Article_BF02652229.pdf
|texte= Properties of laser-induced thermochemical etching of InP
}}
| This area was generated with Dilib version V0.5.81. |  |